An extensive study was made of the effect of implanting 20keV B ions into crystalline material, to doses of between 1013 and 1016/cm2, along 3 channelling directions. The latter were [110], [100], [211], and parallel to (111). In addition, implantation into (100) and (110) samples was carried out using tilt angles of 7 and 38, respectively. The dopant profiles were measured by means of secondary ion mass spectroscopy. The experimental results were analyzed by using Monte Carlo simulations; using various models for lattice damage, thermal vibration, and interatomic potentials. It was found that both the random interstitial, and the split <110> interstitial, models were adequate for describing the experimental dopant profiles. The tetrahedral interstitial model was not suitable. The assumption of Debye temperatures of 450 or 490K both yielded good results, but a temperature of 645K did not do so. The choice of the potential which was used seemed to make little difference in most cases, but a more specific potential had to be used in order to model [110] channelling profiles accurately.

G.Hobler, A.Simionescu, L.Palmetshofer, F.Jahnel, R.Von Criegern, C.Tian, G.Stingeder: Journal of Vacuum Science and Technology B, 1996, 14[1], 272-7