The dependence of dislocation electrical activity, in n-type crystals, upon the duration of deformation was studied. It was found that short dislocations were associated with very little electrical activity. The total concentrations of dislocation-related acceptor centers, as deduced from capacitance-voltage measurements, were estimated to be at least 2 orders of magnitude lower than those usually observed for long dislocations. The electrical activity of the dislocations increased with the dislocation pathway. The rate of dislocation energy spectrum transformations, as well as deep-level transient spectra saturation, was shown to depend upon the impurity content.

O.Kononchuk, V.Orlov, O.Feklisova, E.Yakimov: Solid State Phenomena, 1996, 51-52, 15-20