Numerical and analytical approaches were proposed for the calculation of the dislocation sink efficiency of Si self-interstitials. The results were found to be very similar. Differences between calculated and measured values of the dislocation sink efficiency were explained in terms of the effective dislocation density. This hypothesis was introduced into the analytical model and led, in the first approximation, to the prediction of a linear relationship between the dislocation sink efficiency and the proportion of mobile dislocations (via a climb process).

G.Mariani, V.V.Sirotkin, B.Pichaud, E.B.Yakimov, S.I.Zaitsev: Journal of Physics - Condensed Matter, 1996, 8[31], 5685-90