The dependence of the dislocation recombination activity upon the generation rate, for crystals with various impurity contents, was studied for a wide range of excitation levels. It was found that, throughout the entire range of excitation, the recombination behavior could be attributed to point defects in the dislocation atmosphere. The electron beam-induced current profiles of individual dislocations were shown to be anomalously wide. By numerically solving the diffusion-drift problem for the surface-perpendicular dislocation, the distributions of recombination centers near to the dislocations were reconstructed.

I.Bondarenko, O.Kononchuk, V.Sirotkin: Solid State Phenomena, 1996, 51-52, 123-8