The experimental dependences, of the rates of introduction of A and E centers, upon the dopant concentration were compared with the results of solving a system of equations that took account of the loss of vacancies which occurred when they formed complexes or reached sinks. It was concluded that the concept of sinks for primary vacancies and interstitial atoms did not explain the discrepancy between the number of Frenkel pairs which accumulated in the impurity-defect complexes of a crystal and the number that was calculated theoretically on the basis that a sharp threshold for defect formation existed.

A.I.Baranov, N.I.Boyarkina, A.V.Vasilev: Fizika i Tekhnika Poluprovodnikov, 1995, 29[9], 1570-4 (Semiconductors, 1995, 29[9], 817-9)