A monoclinic 1-Pt defect which had recently been detected was investigated here by means of electron paramagnetic resonance techniques. The defect was one of the predominant defects in Pt-doped samples. It was observed, with complete reproducibility, in samples which had been prepared from n -type material as well as from p-type material; under float-zone and Czochralski conditions. Its concentration varied as a function of the preparation conditions and almost reached that of isolated substitutional Pt in Czochralski material which had been annealed (2h, 540C) after quenching from the Pt diffusion temperature. Because of its concentration, which was greater in Czochralski material than in float-zone material, the defect was assumed to be O-related; though a hyperfine structure with 17O could not be resolved. The defect produced a level that was close to the valence band, as deduced from variations in the Fermi level and the spin Hamiltonian parameters. In the case of photo-electron paramagnetic resonance experiments, the defect was related to recently detected acceptor-like defects that were associated with self-interstitials. Their level position was found to be near to the mid-gap. These defects were among the lifetime-limiting defects in Pt-doped Si.

U.Juda, O.Scheerer, M.Höhne, H.Riemann, H.J.Schilling, J.Donecker, A.Gerhardt: Journal of Applied Physics, 1996, 80[6], 3435-44