It was recalled that self-interstitials were the majority point defects in this semiconductor. They affected the diffusion of impurity atoms, as well as their solubility. A method was suggested here for the separate determination of the equilibrium concentrations and diffusivities of self-interstitials.

A.V.Vaysleyb, J.Malinsky: Physics Letters A, 1996, 216[1-5], 157-60