High-resolution transmission electron microscopic images were calculated for monocrystals, with a [¯110] orientation, which contained a pair of single <111> vacancies that were tetrahedrally bonded, triple di-vacancy clusters with 2 orientations, or a single interstitial Si atom. The displacements of the atoms around the point defects were deduced by extrapolating the distortion around a stacking fault tetrahedron. The small contrast changes and displacements of the images of atoms in a crystal which contained a point defect were revealed by finding the difference, between the computed image of the point defect and the perfect crystal.

M.Awaji, H.Hashimoto: Acta Crystallographica, 1996, A52[2], 158-70