It was recalled that it was known that the new donor, ND1, whose deep-level transient spectroscopic peak appeared at about 33K, could be generated during the 2-step heat-treatment (723, 923K) of C-rich n-type Czochralski material. The annihilation process of ND1 was studied here by using a combination of electrical measurements, deep-level transient spectroscopy and Fourier-transform infra-red spectroscopy. The results showed that ND1 was annihilated upon annealing at temperatures above 1073K. The size of the ND1 cluster was not constant, but was distributed over a certain range. The ND1 lost its electrical activity via both decomposition and growth of the ND1 clusters during annealing. Annealing at temperatures of between 1073 and 1273K was expected to delay ND1 annihilation due to decomposition, and enhance that due to growth, during subsequent annealing at a higher temperature.

S.Zhu: Materials Transactions, 1996, 37[8], 1438-42