A study was made of the H passivation, of P donors and H states in heavily-doped n-type material, by monitoring the electron spin resonance of P donors and conduction electrons. The H passivated fraction, as measured in the P-doped samples, exhibited a marked dependence upon the donor concentration. It was found that the most effective substrate temperature for H passivation was between 100 and 120C. The reactivation of H-passivated donors by isochronal annealing indicated that the recovery stage of P donors shifted to higher temperatures with decreasing donor concentration. The results suggested that the binding of the P-Si-H complex, which was partially due to Coulomb interactions, decreased with increasing P concentration.

N.Fukata, S.Sasaki, S.Fujimura, H.Haneda, K.Murakami: Japanese Journal of Applied Physics, 1996, 35[1-7], 3937-41