Paper eintragenCross-sectional scanning tunnelling microscopic measurements revealed the presence of 2 types of reconstruction on (111) surfaces; depending upon the cleavage conditions. One reconstruction was a 2x1 structure that was consistent with previous reports. The other reconstruction was a novel 8x1 structure which had 1 row missing in every 4 rows of the 2x1 structure. A model was proposed for the missing-row reconstruction that was seen on the (110) surface. Cross-sectional scanning tunnelling microscopic observations of the metal/oxide/semiconductor interface structure revealed a fractured metal layer and cleaved Si areas and demonstrated the possibility of observing the interface with atomic resolution.

T.Komeda, S.Gwo, H.Tokumoto: Japanese Journal of Applied Physics, 1996, 35[1-6B], 3724-9