The implantation of Si with 65keV C, to doses of between 3 x 1017 and 8 x 1017/cm2, was carried out by using a metal ion arc source, so as to form hetero-junction structures. The use of Fourier-transform infra-red spectroscopy and X-ray photo-electron spectroscopy revealed that crystallization into the cubic SiC phase occurred during C implantation when the dose was sufficiently high. The electron spin resonance spectra of the implanted samples were found to have a well-defined g-value of 2.0038, and a peak-to-peak line width of about 6G. This electron spin resonance signal was attributed to Si dangling bonds that were linked to C neighbors.

H.Yan, R.W.M.Kwok, S.P.Wong: Diamond and Related Materials, 1996, 5[3-5], 556-9