Defect-free semiconductor-on-insulator layers were grown by means of liquid phase epitaxy. The free Si layers were grown laterally over SiO2 by starting from seeds on selectively oxide-masked (111) Si substrates. Growth ended when {111} facets developed at the side-walls. The thin layers were slightly bent with respect to the substrate, and adhered firmly to the oxide film. The surfaces of defect-free layers consisted of a perfect (111) facet, whereas mono-atomic steps were found at the bottom interface of the layers. It was noted that, although the Si layers were slightly bent, layers which were grown from different seeds could coalesce, defect-free, with seams that were up to 150 long. In the case of SiGe layers on patterned Si substrates, misfit and threading dislocations promoted the vertical growth of relaxed layers. Layers of SiGe which were grown laterally over oxide-covered Si substrates contained only a few dislocations.

I.Silier, A.Gutjahr, N.Nagel, P.O.Hansson, E.Czech, M.Konuma, E.Bauser, F.Banhart, R.Köhler, H.Raidt, B.Jenichen: Journal of Crystal Growth, 1996, 166, 727-30