Samples which had been prepared by O implantation (SIMOX), and which had dislocation densities of about 105/cm2, were studied by means of synchrotron white-beam X-ray diffraction topography in transmission. Clear images of threading dislocations in the 5 and 10-thick upper Si layer were obtained. The Burgers vectors of about one third of the dislocations were parallel to the [011] direction, while those of another third were parallel to the [01¯1] direction. The remaining third was thought to consist of 2 closely-spaced dislocations with non-parallel Burgers vectors, or of 1 dislocation with its vector not in <011> directions. Moiré fringe analysis indicated that the lattice parameter difference between the upper Si layer and the substrate was equal to about 6 x 10-8 in the surface plane. It was noted that this value would have been difficult to determine by using any other diffraction method except synchrotron white-beam X-ray diffraction topography.

E.Prieur, J.Härtwig, A.Garcia, M.Ohler, J.Baruchel, B.Aspar, G.Rolland: Journal of Crystal Growth, 1996, 166, 329-33