The damage that was produced by implanting a 3-thick relaxed Si0.75Ge0.25 layer with 2MeV Si+ ions at room temperature was measured as a function of doses of between 1010 and 1015/cm2. The depth profiles of the damage were obtained by using Rutherford back-scattering spectrometry and optical depth profiling. An electron paramagnetic resonance signal with an isotropic g-value of 2.011 was detected in samples that were implanted with more than 3 x 1013/cm2 and was attributed to both Si and Ge dangling bonds.

F.Priolo, C.Spinella, E.Albertazzi, M.Bianconi, G.Lulli, R.Nipoti, J.K.N.Lindner, A.Mesli, R.C.Barklie, L.Sealy, B.Holm, L.A.Nylandsted: Nuclear Instruments and Methods in Physics Research B, 1996, 112[1-4], 301-4