Defect formation in (100) samples at low temperatures during electron cyclotron resonance H plasma treatment was studied. The effect of temperature upon the defect morphology was studied by means of high-resolution transmission electron microscopy. A high density of H-stabilized {111} platelets was observed at 240C, whereas large numbers of amorphous {100} platelets were observed at 385C. The formation of amorphous {100} platelets, without {111} platelets, occurred at 385C. The amorphous {100} platelets at 385C were attributed to a precipitation of O which was promoted by H-enhanced O diffusion. Low-temperature photoluminescence data, and spreading resistance profiles for hydrogenated Si, supported the proposed mechanism for amorphous {100} platelet formation.

K.H.Hwang, J.W.Park, E.Yoon, K.W.Whang, J.Y.Lee: Journal of Applied Physics, 1997, 81[1], 74-7