A quantitative model was developed for the build-up of P in the surface region during thermal annealing. The model took account of the migration of mobile diffusion components (vacancies, E-centers) towards the surface, under the influence of the surface potential, and of complex formation at high impurity concentrations. The model provided a quantitative explanation for an experimentally observed dependence of the relative height of the surface concentration peak upon the volume impurity concentration.

O.V.Aleksandrov, N.N.Afonin: Fizika i Tekhnika Poluprovodnikov, 1996, 30[9], 1570-7 (Semiconductors, 1996, 30[9], 823-6)