Thermal diffusion of Sb from Sb-doped silicate glass and into porous Si layers was studied. The profiles of diffused Sb in the porous layers were fitted to complementary error function curves in order to estimate the diffusion coefficients. It was found that the diffusion coefficients for Sb in porous Si were higher (figure 5), and involved a lower activation energy, than those for Sb in hydrogenated amorphous Si within the temperature range that was investigated.

K.Nishimura, Y.Nagao, N.Ikeda: Japanese Journal of Applied Physics, 1996, 35[2-9B], L1145-7