The interaction of intrinsic O in Czochralski material, with implantation damage that was introduced by 2MeV Si+ ions, was investigated as a function of the annealing temperature and time. After annealing, 4 distinct regions of O localization were revealed by secondary ion mass spectrometry. The various regions were correlated with either a near-surface vacancy-rich region or with a buried layer of extended defects near to the projected range. The relative concentration of O in each region depended upon a competition between O gettering, and out-diffusion to the surface. It was established, by using quasi-kinematic and dynamic contrast transmission electron microscopic imaging techniques, that the O in regions which contained extended dislocations was in the form of fine precipitates. The precipitates decorated both the dislocations and, in the case of faulted loops, the stacking fault planes.

A.Agarwal, K.Christensen, D.Venables, D.M.Maher, G.A.Rozgonyi: Applied Physics Letters, 1996, 69[25], 3899-901