It was noted that a degradation of the generation and recombination lifetime of junction diodes, due to 10MeV proton bombardment, was associated with radiation-induced deep levels. It shown that, over the fluence range that was studied, both the reverse current and the reciprocal lifetime increased linearly with 10MeV H+ fluence. It was expected that n-type Si would be more susceptible to high-energy proton irradiation damage than would p-type material. On the basis of the diode characteristics, it was deduced that the predominant generation center in both n-type and p-type float-zone material was about 0.12eV from the mid-gap position. This strongly suggested that, in both types of material, the di-vacancy level at Ec-0.42eV was the predominant generation center.

E.Simoen, J.Vanhellemont, C.Claeys: Applied Physics Letters, 1996, 69[19], 2858-60