Cubic InN layers were grown onto InAs buffer films, on GaAs(001) substrates, by means of plasma-assisted molecular beam epitaxy. The growth of the InN films was initiated by nitridation of the InAs overlayer at 450C. The lattice constant of the InN, as measured by using X-ray techniques, was equal to 0.498nm; in agreement with reflection high-energy electron diffraction measurements which were performed during growth. Transmission electron microscopic measurements detected stacking faults in the InN layers; parallel to the {111} InN planes.

Growth of Cubic InN on InAs(001) by Plasma-Assisted Molecular Beam Epitaxy. A.P.Lima, A.Tabata, J.R.Leite, S.Kaiser, D.Schikora, B.Schöttker, T.Frey, D.J.As, K.Lischka: Journal of Crystal Growth, 1999, 201-202, 396-8