Deep band-gap states were studied by means of deep-level transient spectroscopy during the transmutation of 45Ti to Sc. The 45Ti was implanted into n-type and p-type material, by means of recoil implantation, using the nuclear reaction: 45Sc(p,n)45Ti. The use of repeated measurements revealed a decrease in concentration of the 3 well-known levels of interstitial Ti, and an increase in the levels at 0.21, 0.47 and 0.50eV below the conduction band edge. Because the concentration versus time curves exactly reflected the nuclear transmutation half-life of 3.08h, these new levels were attributed to Sc. Because the involvement of other defects was unlikely, these levels were suggested to be most probably associated with various charge states of interstitial Sc.

N.Achtziger: Journal of Applied Physics, 1996, 80[11], 6286-92