Isothermal capacitance transient spectroscopy was used to measure the majority carrier capture cross-sections of Ni centers. It was found that the resultant capture cross-sections were independent of temperature, with values of 3.2 x 10-17/cm2 for electron capture at the Ni acceptor center in n-type material and of 1.8 x 10-16/cm2 for hole capture at the Ni donor center in p-type material. These capture cross-sections were associated with the neutral capture of majority carriers at the amphoteric Ni centers.

S.Tanaka, K.Matsushita, H.Kitagawa: Japanese Journal of Applied Physics, 1996, 35[1-9A], 4624-5