The capture kinetics of electrons and holes at Au-H related deep levels were studied in n-type material by means of deep-level transient spectroscopy and minority carrier transient spectroscopy. Four deep levels were detected in the band-gap, and were labelled G1 to G4. The first and last were electron levels, while the others were hole levels (detected by minority carrier transient spectroscopy) that had previously been reported for Au-H complexes in p-type Si. The combination of deep-level transient spectroscopy and minority carrier transient spectroscopy in single-measurement techniques permitted an analysis to be made, of carrier recombination processes which occurred at the various deep levels, by measuring the majority and minority carrier capture cross-sections of each deep level. On the basis of the results, it was proposed that a single type of Au-H defect was responsible for 3 of the observed levels (G1, G2, G4) with the defect having a single donor (G2), and both single (G4) and double-acceptor (G1) charge states. The G3 level was attributed to a combination of 2 closely-spaced levels with similar hole-capture cross-sections but differing values of the electron-capture cross-section.

J.A.Davidson, J.H.Evans: Semiconductor Science and Technology, 1996, 11[11], 1704-12