An investigation was made of the effect of N2O oxidation upon point defect kinetics at high temperatures. The interstitials that were injected during oxidation were monitored by measuring the growth of pre-existing oxidation stacking faults. It was shown that, at high temperatures (1050 to 1150C), the supersaturation of self-interstitials in the Si substrate was enhanced when oxidation was performed in a N2O ambient; as compared with completely dry oxidation. This was attributed to the presence of N at the oxidizing interface. However, at lower temperatures, this phenomenon was reversed and oxidation in a N2O ambient led to reduced supersaturation ratios.

C.Tsamis, D.N.Kouvatsos, D.Tsoukalas: Applied Physics Letters, 1996, 69[18], 2725-7