An investigation was made of Al as a n-type dopant for layers which had been grown by means of atmospheric-pressure metal-organic vapor-phase epitaxy. Triethylaluminum was used as the source. The effects of the substrate temperature, and of the diethyltellurium/diethylzinc transport-rate ratio, upon the photoluminescence of the layers was studied. It was found that the substrate temperature considerably affected the photoluminescence of the layer. With decreasing substrate temperature, the emissions that were associated with acceptor-type complexes of Al donors and Zn vacancies became very weak. This implied that self-compensation had ceased.

S.I.Gheyas, S.Hirano, M.Nishio, H.Ogawa: Applied Surface Science, 1996, 100-101, 634-8