The dislocation structures of lightly deformed layered monocrystals of Mg2+-doped material were studied. Plastic shear was found to appear at the interface between nominally pure and Mg-doped layers, and to occur in the pure layers as slip bands. The dislocation density in screw-slip bands, as measured in doped layers, was 5 to 6 times lower than that in homogeneous LiF crystals of the same composition. In the case of edge-slip bands, it did not differ essentially between pure and doped layers. The pattern of the screw dislocation distributions was found to change at the interfaces between pure and doped layers. It was suggested that the dislocation structure which was observed in layered single crystals formed only in pure layers, from fresh dislocations that were generated by sources which emitted dislocation pile-ups of one sign. An intense multiplication of dislocations at point defects in doped layers, such as occurred in doped homogeneous single crystals, did not occur.

A.V.Nikiforov, O.V.Klyavin: Fizika Tverdogo Tela, 1996, 38[9], 2744-9 (Physics of the Solid State, 1996, 38[9], 1505-7)