The irradiation of film samples, and optical absorption measurements, were used to obtain color center depth profiles. The use of low-energy electron beams to create defects, together with a structure in which a layer of material was buried in a different matrix, permitted the study of the color center spatial distribution in a simple form. A relationship between the final defect distribution and the irradiation conditions was established by means of Monte Carlo simulations of the electron irradiation.

M.Cremona, L.G.Jacobsohn, H.Manela, M.H.P.Mauricio, L.C.Scavarda do Carmo, R.A.Nunes: Materials Science Forum, 1997, 239-241, 725-8