The main types of structural inhomogeneity in high-temperature crystals were illustrated by the examples of these doped crystals. The role which was played by dislocation arrays in the relaxation of stresses that were caused by sub-structural formations, with various origins (growth sectors, growth bands), and various inclusions was considered. It was shown that these formations led to the ordering of most dislocations in crystals, and in turn led to the partial relaxation of stresses. By suitable variation of the growth conditions and microstructures of crystals, it was possible to obtain a preferred dislocation distribution in the crystal bulk and prevent their cracking during cooling.

Effect of Dislocation Arrays in Crystals on Relaxation of Local Stresses Caused by Structural Inhomogeneity. E.G.Tsvetkov, G.M.Rylov, A.M.Yurkin: Kristallografiya, 1999, 44[2], 308-16 (Crystallography Reports, 1999, 44[2], 308-16