Sapphire single crystals were implanted with Pt and W, at room temperature, to doses ranging from 1014 to 5 x 1016/cm2. Detailed angular scans through the main axial directions showed that, at fluences of up to 1015/cm2, some 80% of the W and Pt ions were incorporated at substitutional or near-substitutional lattice sites. Below the amorphization threshold, the implantation damage exhibited a double-peak structure which partially annealed out at 800C. Amorphization of the implanted region began at doses of the order of 1016/cm2. When annealing was carried out in the ambient atmosphere, the damage recovered completely at 1100C; even after doses of the order of 5 x 1016/cm2.

Lattice Location and Annealing Behaviour of Pt and W Implanted Sapphire. E.Alves, R.C.Da Silva, M.F.Da Silva, J.C.Soares: Nuclear Instruments and Methods in Physics Research B, 1999, 147[1-4], 226-30