Highly split room-temperature visible light emissions (335 to 650nm) were observed from Si-rich oxide films that had been deposited from a plasma phase mixture of silane and O2. Photoluminescence bands at 365 and 469nm were attributed to the E’ center and the neutral O vacancy, respectively. Relatively sharp peaks at 403 and 535nm were related to the development of a Si-enriched polycrystalline core.

K.Kim, M.S.Suh, T.S.Kim, C.J.Youn, E.K.Suh, Y.J.Shin, K.B.Lee, H.J.Lee, M.H.An, H.J.Lee, H.Ryu: Applied Physics Letters, 1996, 69[25], 3908-10