The point defects which were revealed by electron spin resonance studies of Si/SiO2/Si structures were considered. Emphasis was placed on the separation by implantation of oxygen material. The uniformity of the buried oxide of such structures was investigated by combining chemical etch-back, atomic force microscopy, and the electron spin resonance probing of E’ defects which were generated, in a spatially controlled manner. In the case of single-implant buried oxides, a rich pyramid-like structure was revealed at the interface and was suggested to be coesite. It was concluded that the confinement of O-rich Si between crystalline Si layers was a critical condition for their formation. It was considered that these results confirmed the usefulness of electron spin resonance-active point defects in the atomic probing of the nature of such structure.

A.Stesmans: Materials Science Forum, 1997, 239-241, 1-6