Ceramic samples of the Cr-doped oxide, (V1-xCrx)2O3 (with x-values of 0.3, 0.6 or 0.7), were bombarded with 572MeV 52Cr or 640MeV 64Ni ions, to fluences of between 4 x 1011 and 1.1 x 1014/cm2, under vacuum at room temperature. The irradiated samples were characterized by using electrical resistivity to monitor low-temperature and high-temperature transitions in this system. It was found that bombardment with Cr and Ni ions created bi-layered samples because the mean projected ranges of the ions were shorter than the sample thickness. The bilayer structure was characterized by the occurrence of 2 transitions at low temperatures. The negative temperature coefficient behavior above this transition was appreciably attenuated due to the presence of the bi-layered structure. The use of  in situ  measurements to study an irradiated sample showed that, after annealing, the electrical characteristics of the low-temperature and high-temperature transitions tended to be close to those of non-irradiated samples. However, annealing at up to 380C did not remove all of the irradiation effects.

H.R.Kokabi, F.Studer: Journal of Applied Physics, 1996, 80[10], 5646-52