The implantation of 30 or 100keV 11B+ ions to a dose of 1015/cm2, into B-doped chemical vapor deposited material, was studied by using Raman spectroscopic and cathodoluminescence techniques. The H plasma treatment was used to restore the implantation-induced defects and to etch away the heavily damaged surface layers of as-implanted samples. It was found that, in the case of samples that had been doped with a low concentration of B atoms, a greater fraction of the residual defects was removed by the plasma treatment. That is, the numbers of residual non-diamond components and point defects, such as interstitial carbons and vacancies, were greatly reduced.

H.Yagyu, M.Deguchi, Y.Mori, A.Hatta, T.Ito, M.Kitabatake, H.Sakakima, T.Hirao, A.Hiraki: Thin Solid Films, 1996, 281-282[1-2], 271-4