A novel microwave plasma chemical vapor deposition technique was used to produce multiply twinned films with quintuplet wedges. Biased nucleation, non-biased growth, and high CH4/H ratios were used to prepare the multiply-twinned films. The growth parameter was controlled so as to be close to, but larger than 3/2, in order to permit multiply-twinned particles with quintuplets to out-grow the parent face and form secondary crystals with uniformly distributed particle sizes and smooth surfaces. As there was no need to suppress the natural growth of twins in the vapor-grown material, higher growth rates could be obtained.

W.N.Wang, N.A.Fox, T.J.Davis, D.Richardson, G.M.Lynch, J.W.Steeds, J.S.Lee: Applied Physics Letters, 1996, 69[19], 2825-7