The spatial distribution of cathodoluminescence emissions from thin ZnS films on GaAs(100) was examined by using a low-temperature cathodoluminescence measurement system, combined with transmission electron microscopy. The correlation between the cathodoluminescence emissions and structural defects was studied by comparing the monochromatic cathodoluminescence images with transmission electron microscopic images for both plan-view and cross-sectional observations. It was found that the neutral acceptor-bound exciton associated emission (A0,X) and the free-electron to ionized acceptor transition emission (e,A) were affected by the stacking fault distribution. A localization of the emission, due to the deep-level emission transition, near to the interface suggested that Ga atoms diffused from the GaAs substrate.

T.Mitsui, N.Yamamoto, T.Tadokoro, S.Ohta: Journal of Applied Physics, 1996, 80[12], 6972-9