An investigation was made of the effect of the local microstructure upon electromigration dynamics in sub-micron interconnects by using  in situ  transmission electron microscopy. This permitted the observation, in real time, of the formation, growth, migration, pinning, failure-initiation and healing of a void. It was noted that grain boundaries markedly affected almost all aspects of electromigration-induced void and failure dynamics in sub-micron runners. It was also noted that electromigration voids nucleated at grain boundaries long before open-circuit failure occurred.

S.P.Riege, J.A.Prybyla, A.W.Hunt: Applied Physics Letters, 1996, 69[16], 2367-9