The diffusion of Pd in amorphous alloy films which had been deposited onto Si were investigated by means of transmission electron microscopy. The amorphous films began to crystallize at their interface with the substrate. Measurements of the thickness of the amorphous layer, as seen on cross-sections, then permitted estimates to be made of the diffusion coefficients and activation energies for diffusion and relaxation. In the case of the diffusion annealing of Ta70Pd30/Si samples at 625, 650 and 675C, the activation energy for diffusion was estimated to be 4.75eV.

N.V.Rozhanskii, V.O.Lifshits: Philosophical Magazine A, 1997, 75[1], 49-59