A model was developed for the formation of misorientations in highly mismatched (100)-oriented zincblende semiconductor hetero-epitaxial layers that were grown onto vicinal substrates. The model was based upon the asymmetrical generation of 60 misfit dislocations during island coalescence in the initial growth stage, and upon asymmetrical strain release at substrate steps. It predicted the existence of a correlation between tilt angle and initial growth planarity. Good agreement was found between the predictions of the model, and experimental data on GaAs/Si and other systems. It was shown that, if the net tilt was small, an azimuthal rotation of the tilt axis could occur even if the system symmetry was expected to hinder it. The effects of annealing and thermal mismatch upon the tilt were also considered.

F.Riesz: Journal of Vacuum Science and Technology A, 1996, 14[2], 425-30