The diffusion kinetics were studied, at temperatures of between 220 and 270K (table 33), by analyzing the photo-induced dissociation of an etchant-generated H-C or D-C complex. Under suitably strong illumination, the annihilation rate of the complex was proportional to the P density. This indicated that the rate-determining step was the diffusion of H or D to P atoms. By invoking diffusion-controlled reaction theory, it was deduced that the diffusion behaviors were described by:

D:     D(cm2/s) = 0.005 exp[-0.49(eV)/kT]

H:     D(cm2/s) = 0.07 exp[-0.54(eV)/kT]

Y.Kamiura, M.Yoneta, F.Hashimoto: Applied Physics Letters, 1991, 59[24], 3165-7

Table 33

Diffusivity of D and H in Si