The migration of H in amorphous material which had been deposited at a temperature of 77K was determined by monitoring the decay of the low-angle neutron scattering intensity during the annealing of .../Si-H/Si-D/... multi-layers. Coefficients which ranged from 10-19 to 5 x 10-19cm2/s were found for annealing temperatures of between 250 and 300C (table 36).

M.Vergnat, S.Houssaini, C.Dufour, A.Bruson, G.Marchal, P.Mangin, R.Erwin, J.J.Rhyne, C.Vettier: Europhysics Letters, 1991, 14[5], 457-62

Table 36

Diffusion of H in Si