The migration and acceptor neutralization of H in monocrystalline material was studied. Spreading resistance measurements showed that surface, and sub-surface, disordered regions directly inhibited H penetration. These effects were independent of the type of disorder and the hydrogenation technique. Secondary ion mass spectrometry profiles of deuterated samples confirmed that D migration through the disordered regions was suppressed. It was found that annealing of these hydrogenated damage regions resulted in the generation of an acceptor deactivation profile which persisted at temperatures of up to 800C and for durations of up to 60s. This sustained deactivation effect resulted in a change, in the free carrier concentration, by as much as 4 orders of magnitude. The results strongly suggested that H-soaked damage regions acted as a source of atomic H during rapid thermal annealing.

K.Srikanth, S.Ashok: Journal of Applied Physics, 1991, 70[9], 4779-83