A review was presented of the authors' studies of the physiochemical behavior of P, C, and H in Si. The results covered the diffusion and segregation of impurities in monocrystalline and polycrystalline material, the passivation of recombining defects by H, and H-dopant interaction. More detailed information was given on H diffusion. The results were discussed in terms of the existence of complex mechanisms of interaction between H and impurities or defects.

A.Chari, P.De Mierry, A.Menikh, M.Aucouturier: Revue de Physique Appliquée, 1987, 22[7], 655-62