The diffusion coefficient of the dominant (g = 2.0055) paramagnetic defect (D-center) in amorphous material was found to be less than half as high as that for H. High D-center densities were found to trap H. These results removed the possibility that the D-center was responsible for H motion in hydrogenated amorphous Si.

W.B.Jackson, C.C.Tsai, R.Thompson: Physical Review Letters, 1990, 64[1], 56-9