The elastic recoil analysis technique was used to measure the H diffusion coefficient at 400C in 5 undoped thin films of amorphous hydrogenated Si and crystalline Si. The deposition temperature of the films ranged from 50 to 250C, and the corresponding nominal H concentrations ranged from 18 to 11at%. After annealing the samples, the H concentration profiles were measured and permitted the diffusion coefficient to be determined. It was found that the higher the deposition temperature, the larger was the diffusion coefficient. It was suggested that this behavior could be attributed to variations in the cluster concentration in the films.

X.M.Tang, J.Weber, Y.Baer, F.Finger. Solid State Communications, 1990, 74[3], 171-4