The migration of H in B-doped radio-frequency sputter-deposited hydrogenated amorphous material was deduced from the secondary ion mass spectrometry profiles of D in annealed a-Si:H/a-Si:(H,D)/a-Si:H multi-layers. The exponent in the diffusion constant:

D = Do(wt)-a

(where w was an attempt frequency and Do was a constant) was equal to 0.7, and decreased markedly after annealing for about 50h at 180C or about 35h at 225C. It then increased to between 0.8 and 1. That is, diffusion was almost quenched by annealing for up to 1100h. This behavior was attributed to the effect of modifications (in the micro-void system) that were related to structural relaxation of the network.

S.Mitra, R.Shinar, J.Shinar: Physical Review B, 1990, 42[10], 6746-9