The behavior of H in P-doped material was investigated by monitoring shallow donor P, using electron spin resonance techniques. Appreciable broadening in motionally narrowed electron spin resonance lines was first observed in samples which had been treated with H plasma. It was found, from the donor-concentration dependence, that the broadening was caused by Fermi-contact hyperfine interactions between H nuclear spins and donor or conduction electrons. The annealing of H-passivated material indicated that an intermediate H state with a P donor neighbor was formed via the dissociation of P-H complexes at temperatures of between 150 and 350C. It was deduced that H diffused in n-type Si at temperatures greater than 350C.

K.Murakami, H.Suhara, S.Fujita, K.Masuda: Physical Review B, 1991, 44[7], 3409-12