The density of dangling bond defects in plasma-deposited amorphous hydrogenated material was suggested to depend mainly upon the deposition temperature. This, in turn, was due to its effect upon the H diffusivity. It was found that the optimum temperature was equal to about 62% of the bulk-bonded H evolution temperature. Overall, it was proposed that H diffusion in amorphous hydrogenated Si-based alloys occurred mainly via the release of H, from Si-H bonds, to interstitial H sites which were associated with the remaining weak Si-Si bonds. The maximum activation energy for H diffusion was expected to be 3.1eV.

J.Robertson: Applied Physics Letters, 1991, 59[26], 3425-7