By using the elastic recoil detection technique, measurements were made of H profiles in a structure which consisted of amorphous hydrogenated material on an amorphous Si substrate. The samples were annealed at various temperatures, with or without an electrical bias. The results showed that H diffusion in amorphous Si was appreciably enhanced by the imposition of an electrical bias. The existence of excess carriers which were introduced by electrical injection was considered to be responsible for the enhancement of H diffusion.

Z.Song, F.Zhang, G.Yu, G.Kong, G.Chen: Journal of Non-Crystalline Solids, 1993, 164-166[1], 305-8