The relationship between electronic carriers, metastable defects, and H motion in amorphous hydrogenated material was investigated by performing photoconductivity and H diffusion experiments at temperatures above 200C. The photoconductivity decayed with illumination time, due to defect formation. The intensity dependence of the photoconductivity transients indicated that the defect formation mechanism was similar to that which operated at lower temperatures. The photoconductivity data were used to analyze the dependence of the diffusion coefficient upon continuous or pulsed radiation.

P.V.Santos, M.S.Brandt, R.A.Street, M.Stutzmann: Journal of Non-Crystalline Solids, 1993, 164-166[1], 273-6